特集：ゲートスタック技術の表面・界面科学
ダイヤモンド半導体の特異な物性とデバイス展開
―負性電子親和力と電子放出PNダイオード―
2012 年 33 巻 11 号 p. 634-638
詳細
2012 年 33 巻 11 号 p. 634-638
Diamond is a new semiconductor which has been developed in the last around 15 years. It has unique properties and the potential of unique electronic devices. The typical example is negative electron affinity (NEA) for hydrogen terminated diamond surface. The nature of diamond electron affinity was investigated using by photo-yield spectroscopy (TPYS). Using the NEA property, electron emission p-n (p-i-n) diodes were fabricated, and this diode can be used as a new principle power device; a vacuum micro switch operated by a p-n diode.
