研究紹介
微細加工基板へのグラフェンのエピ成長による擬電磁場の創出
2013 年 34 巻 7 号 p. 380-384
詳細
2013 年 34 巻 7 号 p. 380-384
Graphene is the promising material for the next-generation devices owing to its novel electronic property which is governed by “slow” relativistic quantum theory. The theory tells that pseudospin responds to pseudoelectromagnetic field emerged by strain. In this paper, we have studied the pseudoscalar potential in epitaxial graphene grown on microfabricated SiC substrates (μ-EG). It is clarified by low-energy electron microscopy and Raman spectroscopy that pseudoscalar potential emerges in μ-EG due to interfacial strain, and is controlled by the microfabrication pattern.
