抄録
We fabricated resistive random access memory (ReRAM) structure of Pt/Bi2Sr2CaCu2O8+δ(Bi−2212) bulk single crystal/Pt, and investigated Cu electronic states of the Bi−2212 by X−ray absorption near−edge structure. Hydrogen atoms are efficiently introduced into Bi−2212 with the assistance of catalytic effect of Pt by annealing Pt/Bi−2212 structure in hydrogen atmosphere. Resistive switching effect was generated by the reduction of Cu valence due to the formation of chemical bonding between in−plane oxygen of CuO2 layer and hydrogen (O−H bond), which corresponds to the formation of Cu(OH)2−like material, in the Bi−2212 in the vicinity of the Pt electrode. It is, therefore, suggested that the resistive switching effect occurred by bonding/dissociation of the O−H bond due to the migration of the hydrogen ions.
