Networked nanographite (NNG) was grown by using photoemission-assisted plasma enhanced chemical vapor deposition (CVD) on SiO₂ (90 nm) /Si substrates and the career gas dependence of electric resistivity, chemical configuration, and grain size was investigated from Raman spectroscopy, SIMS, and four probes method. In this study, CH₄/Ar and CH₄/H₂ gases were used. NNG with the thickness from 2∼60 nm was grown by changing the growth period. Resistivity of thin films showed clearly decreases in CH₄/H₂ in an order of magnitude nevertheless their grain sizes were almost same at the length of 9 nm. From SIMS measurement, hydrogen concentration of the sample grown by CH₄/H₂ was 3 times less than that of by CH₄/Ar. From these results, it is found that hydrogen termination at grain boundary is the cause of low electric conductivity, and H radicals in CH₄/H₂ plasma may remove the terminated hydrogen by H abstraction reaction in CVD process.