特集：ワイドギャップ半導体・パワー素子の表面科学
4H-SiC ホモエピタキシャル成長における表面モフォロジーのオフ角依存性
2014 年 35 巻 2 号 p. 78-83
詳細
2014 年 35 巻 2 号 p. 78-83
We investigated homoepitaxial growth on 4H-SiC substrates with a vicinal off-angle lower than 1°. The small off angle difference of a tenth part of a degree has an influence on surface morphology of epitaxial layers. This tendency also depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. Low C/Si ratio conditions are also important to control the surface morphology of these substrates. Especially, controlling C/Si ratio with SiH4 flow rate is effective to suppress the generation of step bunching on Si-face epitaxial layers. These results indicate the control of surface free energy is also important to controlling the surface morphology of homoepitaxial growth on these substrates.
