Correlation between a dielectric anomaly and a phase transition of sintered phosphorus doped WO3 ceramics

Atsushi NOSE; Hidetoshi MIYAZAKI; Yukikuni AKISHIGE; Shinya TUKADA; Hisao SUZUKI; Nobuyasu ADACHI; Toshitaka OTA

doi:10.2109/jcersj2.122.25

Feature: Ceramics Processing through Energy Consumption Reduction (Green Processing): Papers

Correlation between a dielectric anomaly and a phase transition of sintered phosphorus doped WO₃ ceramics

Atsushi NOSE, Hidetoshi MIYAZAKI, Yukikuni AKISHIGE, Shinya TUKADA, Hisao SUZUKI, Nobuyasu ADACHI, Toshitaka OTA

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Keywords: Tungsten trioxde, Dielectric property, Temperature dependence, Frequency dependence, Raman spectra

JOURNAL FREE ACCESS

2014 Volume 122 Issue 1421 Pages 25-28

DOI https://doi.org/10.2109/jcersj2.122.25

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Abstract

Phosphorus doped WO₃ (P_xW₁₋_xO₃) ceramics were fabricated by a solid state reaction. Temperature and frequency dependence of dielectric properties for the P_xW₁₋_xO₃ (x = 0–0.15) ceramics were evaluated at the temperature between −20 to 80°C. The dielectric constant of the P_0.05W_0.95O₃ ceramic was 3600–5800 at the frequency range from 1 kHz to 1 MHz in the room temperature, and the dielectric loss of the P_0.05W_0.95O₃ ceramic were less than 0.1 at the frequency of higher than 160 kHz. The dielectric anomaly peak of the WO₃ ceramic has been observed at 20°C, and the dielectric anomaly peak of the P_0.05W_0.95O₃ ceramic has been observed at about 0°C. The interaction between temperature dependence of dielectric properties (dielectric anomaly) ceramics and structural change of the WO₃ and P_0.05W_0.95O₃ were evaluated by Raman spectra.

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