Fabrication of La1−xSrxMnO3 thin films by chemical solution deposition for high-temperature resistive materials

Kentaro SHINODA; Tomohiko NAKAJIMA; Tetsuo TSUCHIYA

doi:10.2109/jcersj2.122.415

Papers

Fabrication of La₁₋_xSr_xMnO₃ thin films by chemical solution deposition for high-temperature resistive materials

Kentaro SHINODA, Tomohiko NAKAJIMA, Tetsuo TSUCHIYA

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Keywords: LSMO, MOD, SiC power electronics, Resistive materials

JOURNAL FREE ACCESS

2014 Volume 122 Issue 1426 Pages 415-420

DOI https://doi.org/10.2109/jcersj2.122.415

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Abstract

Epitaxial thin films of heavily doped perovskite manganite (La₁₋_xSr_xMnO₃ or LSMO with x ≥ 0.5) were successfully fabricated onto SrTiO₃(001) single crystal substrates by chemical solution deposition. The electrical resistivity and the Hall coefficient were measured from 200 to 673 K. The temperature coefficient of resistance reached a minimum at 0.6 ≤ x ≤ 0.7. A high-temperature stability test showed that the LSMO thin films could be used up to 673 K. This study has shown that LSMO thin films are good candidates as high-temperature resistive materials that can be used in SiC power electronics.

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