Dielectric property of (001) one-axis oriented CaBi4Ti4O15-based thin films and their temperature dependence

Yohta KONDOH; Shota OGAWA; Junichi KIMURA; Takanori KIGUCHI; Toyohiko J. KONNO; Hiroshi FUNAKUBO; Hiroshi UCHIDA

doi:10.2109/jcersj2.122.477

Papers

Dielectric property of (001) one-axis oriented CaBi₄Ti₄O₁₅-based thin films and their temperature dependence

Yohta KONDOH, Shota OGAWA, Junichi KIMURA, Takanori KIGUCHI, Toyohiko J. KONNO, Hiroshi FUNAKUBO, Hiroshi UCHIDA

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Keywords: Dielectrics, Thin film, Calcium bismuth titanate, Chemical solution deposition (CSD), Doping, Temperature coefficient of capacitance (TCC)

JOURNAL FREE ACCESS

2014 Volume 122 Issue 1426 Pages 477-482

DOI https://doi.org/10.2109/jcersj2.122.477

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Abstract

We proposed a thin-film capacitor with a stable temperature coefficient of capacitance (TCC) based on bismuth layer-structured dielectrics, CaBi₄Ti₄O₁₅. Two types of doping were conducted to lower the dielectric loss in a higher temperature range above 300°C, i.e., Mn ion to compensate for lattice defects in crystalline grains and Bi₁₂SiO₂₀ to form a grain boundary phase were attempted in order to improve the insulating property of the oriented CaBi₄Ti₄O₁₅ films. (00l) one-axis oriented Mn-doped or Bi₁₂SiO₂₀-doped CaBi₄Ti₄O₁₅ films (with Mn or Bi₁₂SiO₂₀ content up to 3.0 or 1.75%) were fabricated successfully on (111)Pt/TiO₂/(100)Si substrates buffered by (001)Ca₂Nb₃O₁₀ nanosheets. These films exhibited a relatively lower loss factor in the temperature range from R.T. up to 400°C. In particular, the behavior of TCC on the Bi₁₂SiO₂₀-doped CaBi₄Ti₄O₁₅ film was significantly stable, with a change in capacitance, ΔC/C_R.T., within ±10% even at 400°C.

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