The precursor solution for lanthanum strontium cobalt oxide (LSCO) was modified to increase the single-layer film thickness. Results show that LSCO with 170 nm thickness was deposited on a Si wafer for stress engineering of a ferroelectric thin film. The single-layer film thickness for LSCO layer increased concomitantly with increasing viscosity in LSCO precursor solution. In addition, the crystallinity and the electrical resistivity of a LSCO with lanthanum nickel oxide (LNO) seeding layers using the modified LSCO precursor solution was nearly equal to that of the reported LSCO precursor solution. The residual stress in lead zirconate titanate with Zr/Ti = 53/47 composition thin film on a LSCO(170 nm)/LNO(160 nm)/Si stacking structure was −0.9 GPa compressive stress, which enhances the ferroelectric property (2P_r = 120 µC/cm²).