Electrical and optical properties of W-doped ZnO films grownon (11\bar{2}0) sapphire substrates using pulsed laser deposition

Yutaka ADACHI; Noriko SAITO; Minako HASHIGUCHI; Isao SAKAGUCHI; Taku SUZUKI; Naoki OHASHI; Shunichi HISHITA

doi:10.2109/jcersj2.122.908

Papers

Electrical and optical properties of W-doped ZnO films grownon (11\bar{2}0) sapphire substrates using pulsed laser deposition

Yutaka ADACHI, Noriko SAITO, Minako HASHIGUCHI, Isao SAKAGUCHI, Taku SUZUKI, Naoki OHASHI, Shunichi HISHITA

著者情報

キーワード: Zinc oxide, Tungsten doping, Sapphire substrate, Pulsed laser deposition, Hall measurement, Defect compensation

ジャーナルフリー

2014 年 122 巻 1430 号 p. 908-913

DOI https://doi.org/10.2109/jcersj2.122.908

詳細

抄録

W_xZn₁₋_xO films with various doping concentration were prepared using pulsed laser deposition (PLD) on the (1120) face of sapphire. The c-axis-oriented W_xZn₁₋_xO films were grown without in-plane rotation domains when the W content in the films was below 3.6 at.%. The films exhibit a high transmittance of approximately 80% in the visible-near infrared region regardless of the W content, and no shift of the absorption edge was observed. From the results of Hall measurements, it was revealed that the doping efficiency of W in the films was <0.15 electrons/W. The electron mobility of the W_xZn₁₋_xO films was 14–35 cm² V⁻¹ s⁻¹, which is relatively low compared with that of the undoped ZnO film grown using PLD. The low doping efficiency and electron mobility are considered to be attributed to the formation of defects resulting from the W-doping.

責任著者(Corresponding author)

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