A new process for forming an SiC layer is proposed in which a surface of metal silicon is exposed to gaseous SiO and a gaseous carbon compound at around 1400°C, thereby an SiC layer is formed substantially only on the surface of metal silicon. The resulting SiC layer is of crystalline cubic SiC and a few tens µm in thickness. We consider that the carbon of the SiC layer derives from the gaseous carbon compound and the gaseous SiO promotes the formation of the SiC layer, therefore this process for forming the SiC layer can be defined as one of chemical vapor deposition processes.